Abstract Heavily doping beryllium in the InGaAsN/GaAs quantum well (QW) can improve
doping of Be suppresses the strain relaxation in InGaAsN(Be)/GaAs QW during thermal
measured during growth of GaAsN/GaAs, InGaAs/GaAs and InGaAsN/GaAs multi quantum well (MQW) structures. The reflectance curve was observed to be different when MQW
89881.pdf Title Quantum well intermixing for the fabrication of InGaAsN/GaAs lasers with
thermal annealing in InGaAsN/GaAs QW laser structures grown by solid-source molecular-
( = 1.17–1.19 m) InGaAs–GaAsP–GaAs quantum-well lasers, although it is ap- plicable to
strain, temperature analysis. I. INTRODUCTION THE EXPLOSION in the Internet and data
1300-nm emitting InGaAsN/ GaAs/GaAsP strain-compensated single quantum well (QW) in the temperature range of T ? 10 K 300 K is investigated. The PL spectra observed at
μm InGaAsN:Sb/GaAs multiple-quantum-well lasers grown by molecular-beam epitaxy X.
the lateral relaxation of strain is shown to be significantly delayed in comparison with a Sb-