FQS4410 Single N-Channel, Logic Level, Power MOSFET

©2000 Fairchild Semiconductor International
May 2000
Rev. A, May 2000
FQS4410
QFET QFET QFET QFETTM
FQS4410
Single N-Channel, Logic Level, Power MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for low voltage applications such as DC/DC
converters, high efficiency switching for power
management in portable and battery operated products.
Features
•10A, 30V, RDS(on) = 0.0135Ω @VGS = 10 V
•Low gate charge ( typical 21 nC)
•Low Crss ( typical  145 pF)
•Fast switching
•Improved dv/dt capability
•175°C maximum junction temperature rating
Absolute Maximum Ratings     TC = 25°C unless otherwise noted
Thermal Characteristics
SymbolParameterFQS4410Units
VDSS Drain-Source Voltage30V
ID Drain Current  - Continuous (TC = 25°C) 10A
- Continuous (TC = 70°C) 8A
IDM Drain Current - Pulsed (Note 1) 50A
VGSS Gate-Source Voltage ± 20V
dv/dtPeak Diode Recovery dv/dt (Note 3) 7.0V/ns
PD
Power Dissipation  (TC = 25°C) 2.5W
Linear Derating Factor0.02W/°C
TJ, TSTG Operating and Storage Temperature Range-55 to +175°C
SymbolParameterTypMaxUnits
RθJA Thermal Resistance, Junction-to-Ambient --50°C/W
1
2
3
4
5
6
7
8
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FQS4410
 (Note 4)
 (Note 4, 5)
 (Note 4, 5)
 (Note 4)
Rev. A, May 2000
Electrical Characteristics     TC = 25°C unless otherwise noted
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 3mH, IAS = 10A, VDD = 15V, RG = 25 Ω, Starting  TJ = 25°C
3. ISD ≤ 10A, di/dt ≤ 300A/us, VDD ≤ BVDSS,
Starting  TJ = 25°C 
4. Pulse Test : Pulse width ≤300µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
SymbolParameterTest ConditionsMinTypMax
Unit
s
Off Characteristics
BVDSS Drain-Source Breakdown Voltage  VGS = 0 V, ID = 250 µA 30----V
∆BVDSS
/       ∆TJ
Breakdown Voltage Temperature
Coefficient
ID = 250 µA, Referenced to
25°C --0.03--V/°C
IDSS
Zero Gate Voltage Drain Current
VDS = 30 V, VGS = 0 V ----1 µA
VDS = 24 V, TC = 125°C ----10 µA
IGSSF Gate-Body Leakage Current, Forward VGS = 20 V, VDS = 0 V  ----100nA
IGSSR Gate-Body Leakage Current, Reverse VGS = -20 V, VDS = 0 V  -----100nA
On Characteristics  
VGS(th) Gate Threshold Voltage  VDS = VGS, ID = 250 µA 1.0--2.5V
RDS(on) Static Drain-Source
On-Resistance
VGS = 10 V, ID = 10 A
VGS = 4.5 V, ID = 5 A
--
--
--
--
0.0135
0.02
Ω
gFS Forward Transconductance VDS = 10 V, ID = 5 A --16--S
Dynamic Characteristics
Ciss Input Capacitance VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
                                                
--9801280pF
Coss Output Capacitance--590770pF
Crss Reverse Transfer Capacitance--145190pF
Switching Characteristics  
td(on) Turn-On Delay Time
VDD = 15 V, ID = 5 A,
RG = 50 Ω
                                                          
--3070ns
tr Turn-On Rise Time--165340ns
td(off) Turn-Off Delay Time--65140ns
tf Turn-Off Fall Time--110230ns
Qg Total Gate Charge VDS = 24 V, ID = 10 A,
VGS = 5 V                     
                                                         
--2128nC
Qgs Gate-Source Charge--4.2--nC
Qgd Gate-Drain Charge--12--nC
Drain-Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain-Source Diode Forward Current----2.3A
ISM Maximum Pulsed Drain-Source Diode Forward Current----50A
VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 2.3 A   ----1.1V
trr Reverse Recovery Time VGS = 0 V, IS = 24 A,
dIF / dt = 100 A/µs                 
--45--ns
Qrr Reverse Recovery Charge--45--nC
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FQS4410
Rev. A, May 2000
0510152025303540
0
2
4
6
8
10
12
VDS
 = 15V
VDS
 = 24V
※ Note : I
D = 10A
 
VGS, Gate-Source Voltage [V]
QG, Total Gate Charge [nC]
10
-1
10
0
10
1
0
500
1000
1500
2000
2500
3000
Ciss
 = Cgs
 + Cgd (Cds
 = shorted)
Coss
 = Cds
 + Cgd
Crss
 = Cgd
※ Note ;
   1. VGS = 0 V
   2. f = 1 MHz
Crss
Coss
Ciss
 
 
Capacitance [pF]
VDS, Drain-Source Voltage [V]
10-1
100
10
0
10
1
                    VGS
Top :       10.0 V
                  8.0 V
                  6.0 V
                  5.0 V
                  4.5 V
                  4.0 V
                  3.5 V
Bottom :  3.0 V
※ Note :
   1. 250μs Pulse Test
   2. TC = 25℃
 
 
ID, Drain Current [A]
VDS, Drain-Source Voltage [V]
2.02.53.03.54.0
10
-1
10
0
10
1
150℃
25℃
-55℃
※ Note
   1. VDS = 10V
   2. 250μs Pulse Test
 
 
ID, Drain Current [A]
VGS, Gate-Source Voltage [V]
Typical Characteristics
Figure 6. Gate  Charge vs. Gate-Source Voltage
Figure 1. Output Characteristics
01020304050
0
10
20
30
40
VGS
 = 10V
VGS
 = 4.5V
※ Note : T J
 = 25℃
RDS(ON)
 [mΩ ],
Drain-Source On-Resistance
I
D, Drain Current [A]
0.20.40.60.81.01.2
10
-1
10
0
10
1
150℃ ※ Note :
   1. VGS
 = 0V
   2. 250μs Pulse Test
25℃
 
 
IDR, Reverse Drain Current [A]
VSD, Source-Drain voltage [V]
Figure 4. Source-Drain Diode Forward Voltage
Figure 5. Capacitance vs. Drain-Source Voltage
Figure 2. Transfer Characteristics
Figure 3. On-Resistance Variation  vs.
Drain Current
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FQS4410
Rev. A, May 2000
10 -4
10 -3
10 -2
10 -1
10 0
10 1
10 2
10
-1
10
0
10 1
10 2
※  Notes :
   1. Zθ JA(t) = 50 ℃ /W Max.
   2. Duty Factor, D=t
1
/t
2
   3. T JM - TA  = P DM * Zθ JA(t)
single pulse
D=0.5
0.02
0.2
0.05
0.1
0.01
 
 
Zθ JA
(t), Thermal Response
t
1
, Square Wave Pulse Duration [sec]
255075100125150
0
2
4
6
8
10
12
 
 
ID, Drain Current [A]
TC, Case Temperature [℃]
10-1
100
101
10
-1
10
0
101
102
100 ms
 
DC
10 ms
1 ms
100 µs
Operation in This Area
is Limited by R
DS(on)
※ Notes :
   1. TC = 25
o
C
   2. TJ
 = 150
o
C
   3. Single Pulse
 
ID, Drain Current [A]
VDS, Drain-Source Voltage [V]
-100-50050100150200
0.0
0.5
1.0
1.5
2.0
2.5
※ Note :
   1. VGS
 = 10 V
   2. I
D = 10 A
 
 
RDS(ON)
, (Normalized)
Drain-Source On-Resistance
TJ
, Junction Temperature [
o
C]
-100-50050100150200
0.8
0.9
1.0
1.1
1.2
※ Note :
   1. V GS
 = 0 V
   2. I
D = 250 μ A
 
 
BV DSS , (Normalized)
Drain-Source Breakdown Voltage
TJ
, Junction Temperature [
o
C]
Typical Characteristics     (Continued)
Figure 9. Maximum Safe Operating AreaFigure 10. Maximum Drain Current
vs.  Case Temperature
Figure 7. Breakdown Voltage vs. TemperatureFigure 8. On-Resistance vs. Temperature
Figure 11.  Thermal Response
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FQS4410
Rev. A, May 2000
 Gate Charge Test Circuit & Waveform
 Resistive Switching Test Circuit & Waveforms
 Unclamped Inductive Switching Test Circuit & Waveforms
Charge
VGS
5V
Qg
Qgs Qgd
3mA
VGS
DUT
VDS
300nF
50KΩ
200nF 12V
Same Type
as DUT
Vin
VDS
10%
90%
t
d(on)
t
r
t
on t
off
t
d(off)
t
f
Vin
VDS
10%
90%
t
d(on)
t
r
t
on t
off
t
d(off)
t
f
VDD
( 0.5 rated VDS
)
5V
VDS
RL
DUT
RG
EAS
=LL
IAS
2 ----
2
1 --------------------
BVDSS --VDD
BVDSS
EAS
=LL
IAS
2 ----
2
1
EAS
=LL
IAS
2 ----
2
1 ----
2
1 --------------------
BVDSS --VDD
BVDSS
VDD
VDS
BVDSS
t
p
VDD
IAS
VDS
(t)
ID
(t)
Time
BVDSS
t
p
VDD
IAS
VDS
(t)
ID
(t)
Time
10V DUT
RG
L L
ID ID
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FQS4410
Rev. A, May 2000
 Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
VDS
+
_
Driver
RG
Same Type
as DUT
VGS •dv/dtcontrolled by  RG
•IS controlled by pulse period
VDD
L L
I S I S
10V
VGS
( Driver )
I S
( DUT )
VDS
( DUT )
VDD
Body Diode
Forward Voltage Drop
Vf
IFM , Body Diode Forward Current
Body Diode Reverse Current
IRM
Body Diode Recoverydv/dt
di/dt
D =
Gate Pulse Width
Gate Pulse Period
--------------------------
10V
VGS
( Driver )
I S
( DUT )
VDS
( DUT )
VDD
Body Diode
Forward Voltage Drop
Vf
IFM , Body Diode Forward Current
Body Diode Reverse Current
IRM
Body Diode Recoverydv/dt
di/dt
D =
Gate Pulse Width
Gate Pulse Period
-------------------------- D =
Gate Pulse Width
Gate Pulse Period
--------------------------
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FQS4410
Rev. A, May 2000
Package Dimensions
4.92 ±0.20
0.194 ±0.008
0.41 ±0.10
0.016 ±0.004
1.27
0.050
5.72
0.225
1.55 ±0.20
0.061 ±0.008
0.1~0.25
0.004~0.001
6.00 ±0.30
0.236 ±0.012
3.95 ±0.20
0.156 ±0.008
0.50 ±0.20
0.020 ±0.008
5.13
0.202 MAX
#1
#4 #5
0~8°
#8
0.56
0.022
()
1.80
0.071
MAX0.10
MAX0.004
MAX
MIN
+0.10
-0.05 0.15
+0.004
-0.002 0.006
8-SOP
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet IdentificationProduct StatusDefinition
Advance InformationFormative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
PreliminaryFirst ProductionThis datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification NeededFull ProductionThis datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
ObsoleteNot In ProductionThis datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. F1
VCX™
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